Low harmonic rf switch in soi

ABSTRACT

A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.

FIELD OF THE INVENTION

The invention relates to a semiconductor structures and methods ofmanufacture and, more particularly, to an integrated circuit having alow harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI)substrate and methods of manufacture.

BACKGROUND

Silicon-on-insulator (SOI) substrates introduce harmonics intoradio-frequency (RF) switches. Particularly, when an RF switch is formedon an SOI wafer, there can be undesirable device characteristics as aresult of induced harmonics. An SOI wafer (also called an SOI substrate)includes an insulator layer on a silicon (Si) substrate and asemiconductor material layer on the insulator layer. In an RF circuit,the silicon layer provides that active components that can be wiredtogether using any standard IC technology. The insulator layer may be aburied oxide (BOX) layer. The BOX layer is on top of a handle Siliconwafer, e.g., substrate, that typically is of higher resistivity innature to reduce RF coupling. The interface between the BOX layer andthe handle wafer (e.g., substrate) constitutes an inversion layer due toa fixed positive charge in the oxide and an induced negative mobilecharge in the substrate. This mobile charge can react to the voltagesignals produced by the active devices or wires themselves. This voltageresponse behavior of the handle wafer can be characterized as a variablecapacitor (or varactor). An RF device such as a field effect transistor(FET) or wire formed in the silicon on the BOX carrying an RF signalwill modulate the handle wafer varactor behavior, leading tonon-linearities in the signal. This non-linear coupling causes unwanteddistortions in the signal.

Selectively damaging regions in the Si substrate interrupts theinversion layer, which can interrupt the substrate coupling. Forexample, a trench may be formed in the BOX and an inert ion may beimplanted at a high dose into the Si substrate through the trench. As anillustrative example, argon (Ar) may be implanted at an energy of 30 keVand a dose of 5e15/cm³. This disrupts the interface between the BOX andthe substrate and reduces substrate coupling. However, this technique isnot effective for isolating a FET island, such as that used with an RFswitch, because the inert implant does not diffuse laterally under theFET. As such, the trench and implant technique is not useful for activedevices such as an RF switch.

Accordingly, there exists a need in the art to overcome the deficienciesand limitations described hereinabove.

SUMMARY

In a first aspect of the invention, there is a method of fabricating asemiconductor structure. The method includes forming at least one trenchthrough an insulator layer. The at least one trench is adjacent a deviceformed in an active region on the insulator layer. The method alsoincludes forming at least one cavity in a substrate under the insulatorlayer and extending laterally from the at least one trench to underneaththe device.

In another aspect of the invention, there is a method of fabricating asemiconductor structure. The method includes: forming asemiconductor-on-insulator (SOI) wafer including a silicon substrate, aninsulator layer on the substrate, and an active semiconductor layer onthe insulator layer; forming an active field effect transistor (FET)device in the active semiconductor layer; and disrupting an interfacebetween the substrate and the insulator layer at a location directlyunderneath the active FET device.

In accordance with further aspects of the invention, there is asemiconductor structure including: a substrate; an insulator layer onthe substrate; an active device formed in an active semiconductor layeron the insulator layer; at least one trench extending through theinsulator layer; and at least one cavity in the substrate. The at leastone cavity is below the insulator layer and extends laterally from theat least one trench to a location that is vertically aligned with theactive device.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-24 show processing steps and structures associated with aspectsof the invention; and

FIG. 25 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

The invention relates to a semiconductor structures and methods ofmanufacture and, more particularly, to an integrated circuit having alow harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI)substrate and methods of manufacture. In accordance with aspects of theinvention, an active device such as an RF switch is isolated by etchingtrenches in the buried oxide (BOX) around the sides of the active deviceand then isotropically etching the silicon substrate under the activedevice. The isotropic etch process etches the silicon substrate in alldirections, including laterally under the active device. In this manner,the BOX-substrate interface is interrupted or even removed altogetherunder the active device, which results in less substrate coupling.Accordingly, implementations of the invention may be used to improvedevice performance by reducing signal distortion.

In embodiments, harmonic issues are eliminated by forming air cavitiesunder critical switch devices using a lateral undercut techniquecomprising an STS deep silicon etch tool. In further embodiments, anaccess trench is opened through the BOX region that is located adjacentto the active device that requires isolation. An isotropic etch solutionis introduced into the trench to perform a lateral undercut of thesilicon that underlies the BOX under the active device. After performingthe undercut, the access trench is filled and planarized. A siliconetcher, such as those manufactured by Surface Technology Systems (STS)of Redwood City, Calif., can be utilized to practice such isotropicetching.

In embodiments, the undercut is formed after the active device hasalready been formed in the active semiconductor layer on the BOX. Thatis to say, the active device is first formed, and then the lateralundercuts are formed in the substrate under the already-formed activedevice. This ordering of processing steps avoids the formation ofthermal-induced stresses around the lateral undercut that may otherwiseresult from the thermal processing (e.g., annealing) involved in thedevice formation.

FIGS. 1-24 show processing steps and structures associated with forminga semiconductor device in accordance with aspects of the invention.Specifically, FIG. 1 shows an exemplary SOI wafer 10 employed as anintermediate structure in implementations of the invention. The SOIwafer 10 has a bulk semiconductor substrate 15, which is typically asilicon substrate, a buried oxide (BOX) layer 20 formed on the substrate15, and a semiconductor layer 25, which is typically a silicon layer,formed on the BOX layer 20. The SOI wafer 10 may be fabricated usingtechniques well know to those skilled in the art. For example, the SOIwafer 10 may be formed by conventional processes including, but notlimited to, oxygen implantation (e.g., SIMOX), wafer bonding (e.g., the“SMART CUT” method, which is a registered trademark of S.O.I.TEC SiliconOn Insulator Technologies of Bernin, France), etc.

The constituent materials of the SOI wafer 10 may be selected based onthe desired end use application of the semiconductor device. Forexample, the substrate 15 may be composed of any suitable silicon basedmaterial including, but not limited to, Si, SiGe, SiGeC, SiC, GE alloys.The BOX layer 20 may be composed of, for example, SiO₂. Moreover,although the SOI wafer 10 is referred to as “silicon on insulator,” thesemiconductor layer 25 is not limited to silicon. Instead, thesemiconductor layer 25 may be comprised of various silicon basedsemiconductor materials, such as, for example, Si, SiGe, SiC, SiGeC,etc.

In embodiments, the SOI wafer 10 has a thickness of about 700 μm, withthe BOX layer 20 having a thickness of about 1 μm (1000 nm), and thesemiconductor layer 25 having a thickness of about 0.15 μm (150 nm).However, the invention is not limited to these dimensions, and thevarious portions of the SOI wafer 10 may have any desired thicknessesbased upon the intended use of the final semiconductor device.

Still referring to FIG. 1, an active FET device 30 is formed on and/orin a portion of the semiconductor layer 25. Well known CMOS processingtechniques are utilized to define the semiconductor portion. The activesemiconductor is isolated on all 4 sides by using the traditionalshallow-trench isolation (STI) technique. Typically, the STI 32 is builtusing an oxide material. The device 30 may comprise, for example, an RFswitch; however, the invention is not limited to this type of device,and aspects of the invention may be used with any desired devices. Inthe embodiment illustrated in FIG. 1, the semiconductor layer 25comprises an island 33 that is surrounded by STI regions 32 and BOXlayer 20. The invention is not limited to this configuration, however,and the semiconductor layer 25 may take other forms, such as extendingacross a substantial entirety of the top of the wafer 10.

As depicted in FIG. 2, trenches 35 are formed in the STI 32 and the BOXlayer 20 adjacent the device 30. The trenches 35 extend through theentirety of the BOX layer 20 to the underlying substrate 15. Thetrenches 35 may be formed using any suitable semiconductor fabricationtechniques, including but not limited to: masking and etching, laserablation, gas cluster ion beam, etc. In a particular embodiment, thetrenches 35 are formed by applying a patterned mask 40 on the structureand removing material of the BOX layer 20 through the patterned mask 40via an etch process. The mask 40 may be composed of, for example, aphotoresist material, a hard mask material, or any other suitablemasking layer. In embodiments, the etch process is anisotropic andselective to silicon so that the etching occurs in a substantiallyvertical direction through the device STI region 32 and the BOX layer 20and stops at the silicon substrate 15. In particular embodiments, anoxide reactive ion etch (RIE) process is utilized. Alternatively toemploying an etch that is highly selective to the underlying substrate15, a less selective etch may be used that is timed and/or stopped atthe substrate 15 using endpoint detection, such as measuring theintensity of a desired wavelength with an optical spectrometer.

FIG. 3 depicts the formation of cavities 45 in the substrate 15 underthe BOX layer 20 and partially or completely under the device 30 inaccordance with aspects of the invention. In embodiments, the cavities45 are performed by isotropically etching the silicon substrate 15through the trenches 35. The mask 40 may be left in place to protect thedevice 30 and semiconductor layer 25 during the etching of the substrate15. The isotropic etch process etches the silicon substrate 15 insubstantially all directions outward from the trench 35, includingextending laterally from the bottom opening of the trench to a locationdirectly under the device 30, such that the cavities are at leastpartially vertically aligned with the device. As shown in FIG. 3, thecavities 45 are below and at least partially vertically aligned with thedevice 30, such that the cavities 40 interrupt the BOX-substrateinterface at a location directly underneath the device 30. Thisinterruption reduces substrate coupling and improves device performance.

In embodiments, the etch process that is used to etch the substrate 15is selective to oxide such that the BOX layer 20 is not removed. Anydesired etch process that is both isotropic and targeted to thesubstrate 15 relative to the BOX layer 20 may be used within the scopeof the invention. For example, typical etch chemistry may use gases suchas sulfur hexaflouride (SF₆) with a flow rate in the range of about300+/−50 sccm, chamber pressure in the range of abut 30+/−10 milli-Torr,RF power in the range of about 2000+/−500 Watts, with a total etch timeranging from about 10-60 sec, depending on the dimensionality for theundercut expected in feature 45.

As shown in FIG. 4, the mask 40 is removed and the trenches 35 are atleast partially filled with a dielectric material 50. The dielectricmaterial 50 may comprise, but is not limited to, borophosphosilicateglass (BPSG), undoped polysilicon, etc. The dielectric material 50 maybe deposited in any suitable manner, such as chemical vapor deposition(CVD), atomic layer deposition (ALD), molecular layer deposition (MLD),low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemicalvapor deposition (PECVD), etc., and may be planarized using a chemicalmechanical polish (CMP). The deposition process may or may not result inthe formation of voids 55 in the dielectric material 50 in the trenches35 and/or extensions 60 of the dielectric material 50 into the cavities45. In embodiments, however, the dimensions of the trenches 35 and thecavities 45 are chosen in conjunction with the fill process parametersof the dielectric material 50 to ensure that the cavities 45 remainmostly devoid of the dielectric material 50.

FIG. 5 shows an alternative starting structure in accordance withaspects of the invention. As depicted in FIG. 5, a wafer 10′ comprises asilicon substrate 15, BOX layer 20, semiconductor layer 25, and a device30 formed in the semiconductor layer 25. In contrast to FIG. 1, thesemiconductor layer 25 extends across a substantial entirety of the BOXlayer 20 such that the semiconductor layer 25 is arranged adjacent thelateral sides of the device 30.

As depicted in FIG. 6, trenches 65 are formed in the semiconductor layer25 adjacent the device 30. The trenches 65 may be formed using anysuitable semiconductor fabrication techniques, including but not limitedto: masking and etching, laser ablation, gas cluster ion beam, etc. In aparticular embodiment, the trenches 65 are formed usingphotolithographic masking and etching comprising: applying a photoresistlayer (not shown) on the structure; exposing the photoresist to apattern of radiation and developing the photoresist utilizing a resistdeveloper to form a pattern therein; and removing material of thesemiconductor layer 25 through the patterned photoresist layer via anetch process. In embodiments, the etch process is anisotropic andselective to oxide so that the etching occurs in a substantiallyvertical direction through the semiconductor layer 25 and stops at theBOX layer 20. Alternatively to employing an etch that is highlyselective to the underlying BOX layer 20, a less selective etch may beused that is timed and/or stopped at the BOX layer 20 using endpointdetection, such as measuring the intensity of a desired wavelength withan optical spectrometer.

As depicted in FIG. 7, trenches 35 are formed in the BOX layer 20. Thetrenches 35 extend to the underlying substrate 15 and may be formed in amanner similar to that described above with respect to FIG. 2. Forexample, in embodiments, the trenches 35 are formed by performing ananisotropic oxide RIE process through and in substantial alignment withthe existing trenches 65 in the semiconductor layer 25. The trenches 65and 35 combine to form a trench from the top of the structure down tothe upper surface of the substrate 15.

According to aspects of the invention, as illustrated in FIG. 8,cavities 45 are formed in the substrate. The cavities 45 may be formedin a manner similar to that described above with respect to FIG. 3. Forexample, in embodiments, the cavities 45 are created by performing anisotropic silicon etch through the trenches 35 and 65. In embodiments,the isotropic etch process that is used to etch the substrate 15 isselective to the material of the BOX layer 20, such that essentiallyonly the silicon substrate 15 is etched during this process. As depictedin FIG. 9, a nitride film 70 that is typically employed in thefabrication process for protecting devices from moisture and otherundesired elements, may be conformally deposited over the exposedsurfaces of the semiconductor layer 25 and the device 30. Layer 70 maybe composed of any suitable material, such as silicon nitride, and maybe formed using any suitable fabrication technique, such as CVD, ALD,MLD, LPCVD, PECVD, etc. In embodiments, the layer 70 is formed after thecavities 45.

As depicted in FIG. 10, the trenches 35 and 65 are filled with adielectric material 50. The dielectric material 50 may be formed in thesame manner and may be composed of the same materials as that describedabove with respect to FIG. 4. As with the embodiment described abovewith respect to FIG. 4, the formation of the dielectric material 50 mayor may not result in the formation of voids in the dielectric material50 in the trenches and/or extensions of the dielectric material 50 intothe cavities 45. In embodiments, the dielectric material 50 isplanarized using CMP.

FIG. 11 shows an alternative starting structure in accordance withaspects of the invention. As depicted in FIG. 11, a wafer 10″ comprisesa silicon substrate 15, BOX layer 20, semiconductor layer 25, and anactive device such as an RF switch 75 formed in the semiconductor layer25. In embodiments, the RF switch 75 comprises a plurality ofpolysilicon lines 80 on an island 85 composed of the activesemiconductor layer 25. The invention is not limited to an RF switch,but rather other active devices may be used.

As shown in FIG. 12, in embodiments, a mask 90 is formed on the exposedtop surfaces of the structure, including over the polysilicon lines 80,island 85, and BOX layer 20. The mask 90 may be formed using aphotoresist or a dielectric film. For example, a dielectric film that isetch resistant to the isotropic silicon etch may be deposited uniformlyby conventional techniques, such as CVD, ALD, MLD, LPCVD, PECVD, etc.,and may be composed of any suitable material, such as nitride, and morespecifically silicon nitride.

FIGS. 13 and 14 show respective views of the wafer 10″ after a pluralityof trenches 95 have been formed through the mask 90 and BOX layer 20,and also after cavities 100 have been formed in the substrate 15.Particularly, FIG. 13 shows a top-down view (i.e., plan view) and FIG.14 shows a cutaway view of the structure of FIG. 13 taken along lineXIV-XIV. As seen in FIGS. 13 and 14, the trenches 95 extend through themask 90 and BOX layer 20 down to the upper surface of the siliconsubstrate 15. As further depicted in FIG. 14, the cavities 100 areformed in the substrate 15 underneath the RF switch 75. The trenches 95may be formed in any desired manner, including one or more anisotropicetching processes, such as those already described herein. Also, thecavities 100 may be formed by an isotropic etch process performedthrough the trenches, as already described herein. The walls of trenches95 may be lined with a nitride dielectric as already described herein.

In accordance with aspects of the invention, the number of trenches 95and the spacing of the trenches 95 around the RF switch 75 are chosensuch that isotropic etching of the substrate creates the cavities 100under the RF switch, the cavities 100 being large enough to reducesubstrate coupling without rendering the wafer structurally (e.g.,mechanically) unstable. In the illustrative example shown, the RF switch75 has a length S_(L) of about 100 μm and a width S_(W) of about 10 μm,and there are three trenches 95 along the long sides of the RF switch 75and a single trench 95 along each short side of the RF switch 75. Thelength and width of the trenches 95 are not critical, but should be ofsufficient size to permit etching of the substrate through the trenches95. In embodiments, each trench 95 has a width T_(W) of about 1 to 2 μmand a length T_(L) of about 20 to 25 μm. The invention is not limited tothese dimensions of the RF switch 75 and trenches 95, and any suitabledimensions may be used within the scope of the invention.

According to aspects of the invention, the spacing T_(S) betweenadjacent trenches, e.g., trenches 95 a and 95 b, is about ten to twentytimes the width of the trenches. For trenches having a width of about 1to 2 μm, the spacing between adjacent trenches is about 10 to 20 μm.Such spacing between trenches accommodates isotropic etching of thesubstrate between trenches to preserve the structural/mechanicalsoundness of the chip. More specifically, when the substrate isisotropically etched as described herein, the etch process erodes thesilicon substrate between adjacent trenches. Since the isotropic etchtravels in substantially all directions, the isotropic etch process fromone respective trench travels toward an adjacent trench, and vice versa.As such, the spacing between adjacent trenches is chosen so thatsufficient silicon will remain to support the RF switch after theisotropic etch.

For example, in embodiments, the isotropic etch process travels about 2to 5 μm in the lateral direction from the edge of the trench throughwhich the etch is performed. Thus, the etch through trench 95 a travelsabout 2 to 5 μm toward trench 95 b, and the etch through trench 95 btravels about 2 to 5 μm toward trench 95 a. In this manner, about 4 to10 μm of silicon is removed between trenches 95 a and 95 b. Accordingly,in embodiments, the spacing T_(S) between trenches 95 a and 95 b ischosen to exceed this amount of silicon removal by an amount that issufficient to maintain the structural integrity of the chip. Inembodiments, two RF switches may be located beside one another on thewafer 10″, and a spacing of about 3 to 4 μm is provided between the twoswitches. It is noted that the particular dimensions described hereinare for illustrative purposes and are not intended to limit theinvention; rather, any suitable dimensions may be used within the scopeof the invention.

As depicted in FIG. 15, the trenches 95 are filled with a dielectricmaterial 50. The dielectric material 50 may formed in the same mannerand may be composed of the same materials as that described above withrespect to FIG. 4. As with the embodiment described above with respectto FIG. 4, the formation of the dielectric material 50 may or may notresult in the formation of voids in the dielectric material 50 in thetrenches and/or extensions of the dielectric material 50 into thecavities 100. In embodiments, the dielectric material 50 is planarizedusing CMP.

FIG. 16 shows an alternative starting structure in accordance withaspects of the invention. As depicted in FIG. 16, a wafer 10′″ comprisesa silicon substrate 15, BOX layer 20, semiconductor layer 25, a passivedevice 120 (e.g., inductor, capacitor, resistor, interconnect, etc.),and an active device 125 (e.g., transistor) formed on/in thesemiconductor layer 25.

As depicted in FIG. 17, a barrier layer 130 is formed on the upperexposed surfaces of the structure, including over the passive device 120and active device 125. The barrier layer 130 may be formed in the samemanner as layer 90 described above, and may be composed of any suitablematerial, such as nitride.

As shown in FIG. 18, trenches 135 a-d are formed adjacent the passivedevice 120 and active device 125. The trenches 135 a-d extendsubstantially vertically through the nitride layer 130, thesemiconductor layer 25, and the BOX layer 20, and exposes an uppersurface of the substrate 15. The trenches 135 a-d may be created asalready described herein, such as by performing one or more masking andanisotropic etching processes.

In accordance with aspects of the invention, as depicted in FIG. 19, aninert ion is implanted into the substrate 15 to create damaged areas 140in the substrate 15 at the interface between the substrate 15 and theBOX layer 20. The ion implant damages the interface between thesubstrate 15 and the BOX layer 20 to interrupt any inversion layer thatmay exist. In embodiments, argon (Ar) is implanted into the substrate 15through the trenches 135 a-d, the implant being performed at an energyof about 30 keV and a dose of about 5e15/cm³. This disrupts theinterface between the BOX layer 20 and the substrate 15 and reducessubstrate coupling between the passive device 120 and the substrate 15.The invention is not limited to implanting argon at the described energyand dose, but rather any suitable ion implantation may be performed todisrupt the substrate interface.

As depicted in FIG. 20, the trenches 135 a-d are filled with adielectric material 50. The dielectric material 50 may formed in thesame manner and may be composed of the same materials as that describedabove with respect to FIG. 4. In embodiments, the dielectric material 50is planarized using CMP.

FIG. 21 shows the formation of a patterned mask 145 on the dielectricmaterial 50. In embodiments, the mask 145 is patterned with openings 150over the trenches 135 a and 135 b that are adjacent to the active device125. The mask 145 may be a photolithographic mask, hard mask, or anyother suitable mask composed of conventional materials and formed usingconventional semiconductor fabrication techniques.

As depicted in FIG. 22, the dielectric material 50 is removed from thetrenches 135 a and 135 b. In embodiments, the dielectric material 50 isremoved using a conventional etch process that selectively removes thedielectric material 50. The removal of the dielectric material 50 fromthe trenches 135 a and 135 b exposes the upper surface of the substrate15 through the trenches 135 a and 135 b.

According to aspects of the invention, as illustrated in FIG. 23,cavities 155 are formed in the substrate 15 underneath the active device130. The cavities 155 may be formed in a manner similar to thatdescribed above with respect to FIG. 3. For example, in embodiments, thecavities 155 are created by performing isotropic silicon etching throughthe trenches 135 a and 135 b.

As depicted in FIG. 24, the mask 145 is stripped and the trenches 135 aand 135 b are filled with a dielectric material 50. The dielectricmaterial 50 may formed in the same manner and may be composed of thesame materials as that described above with respect to FIG. 4. As withthe embodiment described above with respect to FIG. 4, the formation ofthe dielectric material 50 may or may not result in the formation ofvoids in the dielectric material 50 in the trenches and/or extensions ofthe dielectric material 50 into the cavities 155. In embodiments, thedielectric material 50 is planarized using CMP.

Although different exemplary implementations of the invention have beenillustratively described herein, each implementation is not limited toits described structures and/or steps. The structures and/or stepsdescribed with respect to one implementation may be used with anotherimplementation. For example, the step of damaging regions of thesubstrate through ion implantation is not limited to the structuresshown in FIGS. 16-24, but rather may be used with any of the structuresdescribed with respect to FIGS. 1-15.

FIG. 25 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test. FIG. 25 shows a block diagram of anexemplary design flow 900 used for example, in semiconductor IC logicdesign, simulation, test, layout, and manufacture. Design flow 900includes processes, machines and/or mechanisms for processing designstructures or devices to generate logically or otherwise functionallyequivalent representations of the design structures and/or devicesdescribed above and shown in FIGS. 1-24. The design structures processedand/or generated by design flow 900 may be encoded on machine-readabletransmission or storage media to include data and/or instructions thatwhen executed or otherwise processed on a data processing systemgenerate a logically, structurally, mechanically, or otherwisefunctionally equivalent representation of hardware components, circuits,devices, or systems. Machines include, but are not limited to, anymachine used in an IC design process, such as designing, manufacturing,or simulating a circuit, component, device, or system. For example,machines may include: lithography machines, machines and/or equipmentfor generating masks (e.g. e-beam writers), computers or equipment forsimulating design structures, any apparatus used in the manufacturing ortest process, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g. a machinefor programming a programmable gate array).

Design flow 900 may vary depending on the type of representation beingdesigned. For example, a design flow 900 for building an applicationspecific IC (ASIC) may differ from a design flow 900 for designing astandard component or from a design flow 900 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 25 illustrates multiple such design structures including an inputdesign structure 920 that is preferably processed by a design process910. Design structure 920 may be a logical simulation design structuregenerated and processed by design process 910 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 920 may also or alternatively comprise data and/or programinstructions that when processed by design process 910, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 920 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 920 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 910 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 1-24. As such,design structure 920 may comprise files or other data structuresincluding human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 910 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 1-24 to generate a netlist980 which may contain design structures such as design structure 920.Netlist 980 may comprise, for example, compiled or otherwise processeddata structures representing a list of wires, discrete components, logicgates, control circuits, I/O devices, models, etc. that describes theconnections to other elements and circuits in an integrated circuitdesign. Netlist 980 may be synthesized using an iterative process inwhich netlist 980 is resynthesized one or more times depending on designspecifications and parameters for the device. As with other designstructure types described herein, netlist 980 may be recorded on amachine-readable data storage medium or programmed into a programmablegate array. The medium may be a non-volatile storage medium such as amagnetic or optical disk drive, a programmable gate array, a compactflash, or other flash memory. Additionally, or in the alternative, themedium may be a system or cache memory, buffer space, or electrically oroptically conductive devices and materials on which data packets may betransmitted and intermediately stored via the Internet, or othernetworking suitable means.

Design process 910 may include hardware and software modules forprocessing a variety of input data structure types including netlist980. Such data structure types may reside, for example, within libraryelements 930 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 940, characterization data 950, verification data 960,design rules 970, and test data files 985 which may include input testpatterns, output test results, and other testing information. Designprocess 910 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 910 withoutdeviating from the scope and spirit of the invention. Design process 910may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 910 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 920 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 990.

Design structure 990 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in a IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 920, design structure 990 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 1-24. In one embodiment, design structure 990may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 1-24.

Design structure 990 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 990 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 1-24. Design structure990 may then proceed to a stage 995 where, for example, design structure990: proceeds to tape-out, is released to manufacturing, is released toa mask house, is sent to another design house, is sent back to thecustomer, etc.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims, if applicable, areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. The description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiment was chosen and described in order to best explain theprincipals of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated. Accordingly, while the invention has beendescribed in terms of embodiments, those of skill in the art willrecognize that the invention can be practiced with modifications and inthe spirit and scope of the appended claims.

What is claimed:
 1. A method of fabricating a semiconductor structure,comprising: forming a trench through an insulator layer, wherein thetrench is adjacent a device formed in an active region on the insulatorlayer; and forming a cavity in a substrate under the insulator layer andextending laterally from the trench to underneath the device.
 2. Themethod of claim 1, further comprising: forming a barrier layer over theactive device and on walls of the trench after forming the cavity; andfilling the trench with dielectric material.
 3. The method of claim 1,wherein the trench is one of a plurality of trenches around a perimeterof the device, and further comprising providing a spacing betweenadjacent ones of the plurality of trenches of about ten to twenty timesa width of one of the plurality of trenches.
 4. The method of claim 1,wherein the device comprises a radio frequency switch comprising aplurality of polysilicon lines on the active region.
 5. The method ofclaim 1, further comprising damaging regions of the substrate under apassive device or interconnect.
 6. The method of claim 5, wherein thedamaging regions of the substrate comprises: forming an other trench inthe insulator layer; and implanting an inert ion into the regions of thesubstrate.
 7. A method of fabricating a semiconductor structure,comprising: forming a semiconductor-on-insulator (SOI) wafer including asilicon substrate, an insulator layer on the substrate, and an activesemiconductor layer on the insulator layer; forming an active fieldeffect transistor (FET) device in the active semiconductor layer; anddisrupting an interface between the substrate and the insulator layer ata location directly underneath the active FET device.
 8. The method ofclaim 7, wherein: the disrupting the interface between the substrate andthe insulator layer comprises forming at least one cavity in thesubstrate beneath the insulator layer and at least partially verticallyaligned with the active FET device; and the forming the at least onecavity in the substrate comprises: forming at least one trench in theinsulator layer adjacent the active FET device; and performing anisotropic etch of the substrate through the at least one trench, andfurther comprising forming a barrier layer over the active FET device.9. The method of claim 7, further comprising: forming a passive devicein the wafer; and damaging regions of the substrate adjacent the passivedevice by implanting inert ions into the regions of the substrate.
 10. Asemiconductor structure, comprising: a substrate; an insulator layer onthe substrate; an active device formed in an active semiconductor layeron the insulator layer; a trench extending through the insulator layer;and a cavity in the substrate, wherein the cavity is below the insulatorlayer and extends laterally from the trench to a location that isvertically aligned with the active device.
 11. The structure of claim10, further comprising: a barrier layer over the active device and onwalls of the trench; and a dielectric material filling the trench abovethe cavity.
 12. The structure of claim 10, wherein: the active devicecomprises a radio frequency (RF) switch including a plurality ofpolysilicon lines on the active semiconductor layer; and the trench isone of a plurality of trenches around a perimeter of the RF switch. 13.The structure of claim 12, wherein a spacing between adjacent ones ofthe plurality of trenches is about ten to twenty times a width of one ofthe plurality of trenches.
 14. The structure of claim 10, furthercomprising: a passive device adjacent the active device; and a damagedregion of the substrate under the passive device.